KD*P EO Q-Switch


  • 1/4 Wave Voltage: 3.3 kV
  • Transmitted Wave Front Error: < 1/8 Wave
  • ICR: >2000:1
  • VCR: >1500:1
  • Capacitance: 6 pF
  • Damage Threshold: > 500 MW / cm2 @1064nm, 10ns
  • Product Detail

    Technical parameters

    E-O Q Switch alters the polarization state of light passing through it when an applied voltage induces birefringence changes in an electro-optic crystal such as KD*P. When used in conjunction with polarizers, these cells can function as optical switches, or laser Q-switches.
    We provide E-O Q-Switchs based on advanced crystal fabrication and coating technlogy, we can offer a variety of laser wavelengths EO Q switchs which exhibits high transmission (T>97%), high damaged threshold (>500W/cm2 )and high extinction ratio (>1000:1).
    Applications:
    • OEM laser systems
    • Medical/cosmetic lasers
    • Versatile R&D laser platforms
    • Military & aerospace laser systems

    Features Benefits
    CCI Quality – economically priced Exceptional value

    Finest strain-free KD*P

    High contrast ratio
    High damage threshold
    Low 1/2 wave voltage
    Space efficient Ideal for compact lasers
    Ceramic apertures Clean and highly damage-resistant
    High contrast ratio Exceptional hold-off
    Quick electrical connectors Efficient/reliable installation
    Ultra-flat crystals Excellent beam propagation
    1/4 Wave Voltage 3.3 kV
    Transmitted Wave Front Error < 1/8 Wave
    ICR >2000:1
    VCR >1500:1
    Capacitance 6 pF
    Damage Threshold > 500 MW / cm2 @1064nm, 10ns