18 Years Factory Passive Q-Switches - Co:Spinel Crystals – Dien

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18 Years Factory Passive Q-Switches - Co:Spinel Crystals – Dien Detail:

Passive Q-switches or saturable absorbers generate high power laser pulses without the use of electro-optic Q-switches, thereby reducing the package size and eliminating a high voltage power supply. Co2+:MgAl2O4 is a relatively new material for passive Q-switching in lasers emitting from 1.2 to 1.6μm, in particular, for eye-safe 1.54μm Er:glass laser, but also works at 1.44μm and 1.34μm laser wavelengths. Spinel is a hard, stable crystal that polishes well. Cobalt substitutes readily for magnesium in the Spinel host without the need for additional charge compensation ions. High absorption cross section (3.5×10-19 cm2) permits Q-switching of Er:glass laser without intracavity focusing both with flash-lamp and diode laser pumping. Negligible excited-state absorption results in high contrast ratio of Q-switch, i.e. the ratio of initial (small signal) to saturated absorption is higher than 10.

Features

• Suitable for 1540 nm eye-safe lasers
• High absorption section
• Negligible excited state absorption
• High optical quality
• Uniformly distributed Co

Applications

• Eye-safe 1540 nm Er:glass laser
• 1440 nm laser
• 1340 nm laser
• Eye-safe laser range finder

Basic Properties

Chemical formula	Co²⁺:MgAl₂O₄
Crystal structure	Cubic
Lattice parameters	8.07Å
Density	3.62 g/cm³
Melting Point	2105°C
Refractive Index	n=1.6948 @1.54 µm
Thermal Conductivity /(W·cm^-1·K^-1@25°C)	0.033W
Specific Heat/ (J·g^-1·K^-1)	1.046
Thermal Expansion /（10^-6 /°C@25°C ）	5.9
Hardness (Mohs)	8.2
Extinction Ratio	25dB
Orientation	[100] or [111] < ±0.5°
Optical density	0.1-0.9
Damage Threshold	>500 MW/cm²
Doping concentration of Co²⁺	0.01-0.3 atm%
Absorption coefficient	0 ～ 7 cm^-1
Working wavelength	1200 – 1600 nm
Coatings	AR/AR@1540，R<0.2%; AR/AR@1340，R<0.2%

Technical Parameters

Orientation Tolerence	< 0.5°
Thickness/Diameter Tolerance	±0.05 mm
Surface Flatness	<λ/8@632 nm
Wavefront Distortion	<λ/4@632 nm
Surface Quality	10/5
Parallel	10〞
Perpendicular	5ˊ
Clear Aperture	>90%
Chamfer	<0.1×45°
Maximum dimensions	Dia(3-15)×(3-50)mm

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