GaP
Gallium phosphide (GaP) crystal is an infrared optical material with good surface hardness, high thermal conductivity and wide band transmission. Due to its excellent comprehensive optical, mechanical and thermal properties, GaP crystals can be applied in military and other commercial high-tech field.
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Basic Properties |
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| Crystal structure | Zinc Blende |
| Group of symmetry | Td2-F43m |
| Number of atoms in 1 cm3 | 4.94·1022 |
| Auger recombination coefficient | 10-30 cm6/s |
| Debye temperature | 445 K |
| Density | 4.14 g cm-3 |
| Dielectric constant (static) | 11.1 |
| Dielectric constant (high frequency) | 9.11 |
| Effective electron mass ml | 1.12mo |
| Effective electron mass mt | 0.22mo |
| Effective hole masses mh | 0.79mo |
| Effective hole masses mlp | 0.14mo |
| Electron affinity | 3.8 eV |
| Lattice constant | 5.4505 A |
| Optical phonon energy | 0.051 |
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Technical parameters |
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| Thickness of each component | 0.002 and 3 +/-10%mm |
| Orientation | 110 — 110 |
| Surface quality | scr-dig 40-20 — 40-20 |
| Flatness | waves at 633 nm – 1 |
| Parallelism | arc min < 3 |
